摘要: |
为了降低与射频系统级相关的功耗,以及增加输出功率,提出了一种共源共栅结构的CMOS VCO。所提出的VCO核心包含有共源共栅结构,以增加VCO的供电电压。为了降低与栅源级间和栅漏级间击穿相关的可靠性问题,将共源晶体管的栅级节点与共栅晶体管的源级节点相连。为了验证所提出VCO的有效性,采用90nm的RF CMOS工艺设计了一款2.4GHz的CMOS VCO芯片,由测试结果可得,该款VCO在2V电源电压供电下取得了相对较高的输出功率、较低的相位噪声以及变化较平缓的振荡频率。 |
关键词: 共源共栅 交叉耦合 压控振荡器 互补金属氧化物半导体 高输出功率 |
DOI:DOI:10.3969/j.issn.1672-2337.2019.02.018 |
分类号:TN432 |
基金项目:河南省科技攻关项目(No.172102210465);河南省教育厅科学技术研究重点项目(No.16A413013);许昌市科技发展计划项目(No.1502094) |
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A High Output Power VCO Based on Cascade Structure |
ZHOU Ya, JIAO Xiaobo
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1.College of Electrical and Information Engineering, Xuchang University, Xuchang 461000, China;2.Power Telecommunication Center, Xuchang Electric Power Company, Xuchang 461000, China
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Abstract: |
To reduce the power consumption related to the RF system and to increase the output power, a cascade CMOS voltage-controlled oscillator (VCO) is proposed. The VCO core consists of a cascade structure to increase the supply voltage of the VCO. To mitigate the reliability problem associated with gate-source and gate-drain breakdowns, the gate nodes of common-source transistors are connected to the source nodes of common-gate transistors. To verify the functionality of the proposed VCO, a 2.4GHz CMOS VCO using the 90nm RF CMOS process is designed. It is known from the measured results that the proposed VCO can achieve a high output power, a low phase noise, and a flat-changed oscillation frequency under 2 V supply voltage. |
Key words: cascade cross coupling voltage-controlled oscillator complementary medal-oxide-semiconductor(CMOS) high output power |