| 引用本文: | 卢启军，陈野，张涛，朱樟明. 硅基毫米波高增益LNA技术研究[J]. 雷达科学与技术, 2022, 20(4): 397-402.[点击复制] |
| LU Qijun, CHEN Ye, ZHANG Tao, ZHU Zhangming. Research on Silicon-Based Millimeter Wave High-Gain LNA Technology[J]. Radar Science and Technology, 2022, 20(4): 397-402.[点击复制] |
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| 摘要: |
| 针对W波段硅基工艺电路面临的功率增益低、效率低以及噪声差等挑战，本文研究硅基毫米波高增益低噪声放大器（Low Noise Amplifier，LNA）技术。该LNA采用带有射极电感反馈的共射放大器，并通过五级共射放大器级联构成。第一级电路通过提供最小噪声偏置电流，并利用最小噪声匹配实现低噪声性能，后级电路通过提供高增益偏置电流实现高增益性能。另外，为了减小射频信号到衬底的损耗以及信号与旁路元件的耦合，有效提高低噪声放大器的性能，用于匹配电路的电感全部采用传输线形式—接地共面波导。低噪声放大器在中心频率94 GHz处的增益S21达到25.2 dB，噪声系数NF小至5.1dB。在90～100 GHz频段内，输入反射系数S11小于-10 dB，输出反射系数S22稳定在-20 dB左右，芯片面积为500 μm×960 μm。 |
| 关键词: W波段 硅基 低噪声放大器 接地共面波导 |
| DOI：DOI:10.3969/j.issn.1672-2337.2022.04.006 |
| 分类号:TN958；TN722.3 |
| 基金项目:国家自然科学基金（No.62074121， 62034002） |
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| Research on Silicon-Based Millimeter Wave High-Gain LNA Technology |
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LU Qijun, CHEN Ye, ZHANG Tao, ZHU Zhangming
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School of Microelectronics, Xidian University, Xi’an 710071, China
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| Abstract: |
| Aiming at the challenges of low power gain, low efficiency, and poor noise faced by W-band silicon-based process circuits, this paper studies the silicon-based millimeter-wave high-gain low noise amplifier (LNA) technology. The LNA adopts a common-emitter amplifier with emitter inductance feedback, and is formed by cascading five-stage common-emitter amplifiers. The first stage circuit achieves low noise performance by supplying minimum noise bias current and utilizes minimum noise matching, and the latter stage circuit achieves high gain performance by supplying high gain bias current. In addition, in order to reduce the loss of the RF signal to the substrate and the coupling between the signal and the bypass element, and effectively improve the performance of the low-noise amplifier, the inductors used in the matching circuit are all in the form of transmission lines — grounded coplanar waveguides. The gain S21 of the LNA at the center frequency of 94 GHz reaches 25.2 dB, and the noise figure NF is as small as 5.1 dB. In the 90～100 GHz frequency band, the input reflection coefficient S11is less than -10 dB, the output reflection coefficient S22is stable at about -20 dB, and the chip area is 500μm×960μm. |
| Key words: W-band silicon-based process low noise amplifier grounded coplanar waveguide |
